A team of engineers from the Shanghai Institute of Microsystem and Information Technology has created a groundbreaking two-dimensional field-effect transistor (FET) that significantly reduces power consumption. This innovation could lead to smartphones requiring less frequent charging. By overcoming challenges related to gate leakage and dielectric strength, the researchers utilized a single-crystalline aluminum oxide layer to enhance performance. Their work, published in *Nature*, marks a significant step towards miniaturizing silicon transistors for advanced technology applications, including 5G and IoT devices.
